The two trap levels are located at different trap depths beneath the edge of the conduction band. The rate equations corresponding to each trap level allow us to numerically simulate the variation of the concentration of electrons in the two traps and the TL intensity as a function of the temperature for quantum dots 2—8 nm in diameter.
George Kitis - Google Scholar Citations
It is shown that the intensity increases with decreasing in the dot size, indicating that the quantum confinement effect enhances the radiative recombination rate. The two peaks of the intensity correspond to the two different active electron trap levels. With an increase in the dot size, the peaks of the intensity corresponding to the deepest trap shift to the high temperature region. The variation of the concentration of electrons in the traps is given, and this result bridges the experimental gap, where the TL glow curves are generated, and the variation of the concentration of electrons in traps is unknown.
Pagonis, G. Kitis, C. Numerical and Practical Exercises in Thermoluminescence Springer, Skryshevskii, V. Thermally stimulated luminescence in porous silicon. Abdul-Ameer, M. Direct optical energy gap in amorphous silicon quantum dots.
Thermoluminescence from Silicon Quantum Dots in the Two Traps–One Recombination Center Model
Modern Phys. Gregorkiewicz, K. Silicon quantum dots: surface matters. Matter 26, Martini, L. Teles, M. Marques, A. World J. Matter Phys. Cho, M. Green, G.
Conibeer, D. Song, Y.
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